Electrochemical upcycling of indium-gallium-zinc oxide scraps

被引:0
|
作者
Li, Shaolong [1 ,2 ]
Lv, Zepeng [1 ]
He, Jilin [1 ,2 ]
Song, Jianxun [1 ,2 ]
机构
[1] Zhengzhou Univ, Zhongyuan Crit Met Lab, Sci Rd 100, Zhengzhou 450001, Henan, Peoples R China
[2] Zhengzhou Univ, Sch Mat Sci & Engn, Sci Rd 100, Zhengzhou 450001, Henan, Peoples R China
基金
中国博士后科学基金;
关键词
Aqueous solution; Electrolysis; Indium-gallium-zinc oxide scraps; Solid-state; Upcycling; CARBON-PASTE ELECTRODE; RECYCLING INDIUM; VOLTAMMETRIC DETERMINATION; SOLVENT-EXTRACTION; TITANIUM-DIOXIDE; TIN; RECOVERY; SEPARATION; REDUCTION; ITO;
D O I
10.1016/j.psep.2024.10.003
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
At present, the processes of recovering indium-gallium-zinc oxide (IGZO) scraps through hydrometallurgy, pyrometallurgy, or molten salt electro-deoxidation are cumbersome, impurities cannot well be effectively removed, and the environmental benefits are inferior. We herein firstly propose a facile electrochemical method for upcycling of IGZO scraps in ammonium salt aqueous solution at ambient temperature. The feasibility of electrodeoxidation of IGZO in aqueous solution has been verified, using IGZO scraps without further crushing as the cathode and anode. The electro-deoxidation behavior of various oxides exhibits differentiation, among which indium oxide is the most easily deoxidized. This difference hinders the formation of a dense alloy layer on the surface of the IGZO substrate, facilitating the transfer of oxygen ions and enabling continuous electrodeoxidation. Impurities such as aluminum and silicon can be significantly removed, with removal rates of 95.8 % and 75.7 %, respectively, which is also attributed to the difference in electrochemical reduction ability between impurity oxides and IGZO, as well as the solid-state existence of cathode products. The process of upcycling IGZO scraps contributes to recovery with straightforward operation and more adaptable implementation environment, which endows it with optimistic application potential.
引用
收藏
页码:2303 / 2310
页数:8
相关论文
共 50 条
  • [1] Synthesis and Analysis of the Indium-Gallium-Zinc Oxide Semiconductor Structure
    Vinnik, D. A.
    Kovalev, A. I.
    Sherstyuk, D. P.
    Zhivulin, D. E.
    Zirnik, G. M.
    Batmanova, T. V.
    JOURNAL OF STRUCTURAL CHEMISTRY, 2025, 66 (02) : 261 - 268
  • [2] INDIUM-GALLIUM-ZINC OXIDE: INFLUENCE OF THE COMPLEXING AGENT ON THE STRUCTURE
    Zirnik, G. M.
    Sozykin, S. A.
    Chernukha, A. S.
    Solizoda, I. A.
    Gudkova, S. A.
    Vinnik, D. A.
    JOURNAL OF STRUCTURAL CHEMISTRY, 2024, 65 (10) : 2004 - 2013
  • [3] Preparation and sintering of indium-gallium-zinc oxide ceramics with different zinc oxide contents
    Wu, Ming-Wei
    Chang, Shih-Hsien
    Chaung, Wei-Ming
    Huan, Hung-Shang
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2015, 35 (14) : 3893 - 3902
  • [4] Thermal Conductivity of Amorphous Indium-Gallium-Zinc Oxide Thin Films
    Yoshikawa, Toru
    Yagi, Takashi
    Oka, Nobuto
    Jia, Junjun
    Yamashita, Yuichiro
    Hattori, Koichiro
    Seino, Yutaka
    Taketoshi, Naoyuki
    Baba, Tetsuya
    Shigesato, Yuzo
    APPLIED PHYSICS EXPRESS, 2013, 6 (02)
  • [5] Temperature Sensor Made of Amorphous Indium-Gallium-Zinc Oxide TFTs
    Jeong, Hoon
    Kong, Chung Sik
    Chang, Sung Wook
    Park, Kwon Shik
    Lee, Sang Gul
    Ha, Yong Min
    Jang, Jin
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (12) : 1569 - 1571
  • [6] Comprehensive study on the transport mechanism of amorphous indium-gallium-zinc oxide transistors
    Jeong, Jae Kyeong
    Chung, Hyun-Joong
    Mo, Yeon-Gon
    Kim, Hye Dong
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (11) : H873 - H877
  • [7] In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process
    Jia, Junjun
    Torigoshi, Yoshifumi
    Shigesato, Yuzo
    APPLIED PHYSICS LETTERS, 2013, 103 (01)
  • [8] Recycling of Spent Indium-Gallium-Zinc Oxide Based on Molten Salt Electrolysis
    Li, Shaolong
    Liu, Yang
    Che, Yusi
    Song, Jianxun
    Shu, Yongchun
    He, Jilin
    Xu, Baoqiang
    Yang, Bin
    ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2020, 8 (43) : 16296 - 16303
  • [9] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
    Jeong, Jae Kyeong
    Yang, Hui Won
    Jeong, Jong Han
    Mo, Yeon-Gon
    Kim, Hye Dong
    APPLIED PHYSICS LETTERS, 2008, 93 (12)
  • [10] Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping
    Ho, Szuheng
    Yu, Hyeonggeun
    So, Franky
    APPLIED PHYSICS LETTERS, 2017, 111 (21)