Enhanced molding and mechanical properties of SiC-based ceramic lattice structures via digital light processing

被引:0
|
作者
Xin, Junzhe [1 ]
Wu, Weidong [2 ,3 ]
Cao, Kun [1 ]
Li, Chenhui [2 ]
Peng, Yuefang [2 ]
Du, Chun [2 ]
Shan, Bin [2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, State Key Lab Intelligent Mfg Equipment & Technol, Wuhan 430000, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430000, Peoples R China
[3] Wuhan CONSTANT Technol Co Ltd, 818 Gaoxin Ave, Wuhan 430000, Peoples R China
基金
中国国家自然科学基金;
关键词
Silicon carbide; Powder modification; SiC-based ceramic; Ceramic lattice structures (CLSs); MICROSTRUCTURE; BEHAVIORS; AL2O3; DEPTH; WIDTH;
D O I
10.1016/j.ceramint.2024.08.081
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon carbide (SiC) ceramic lattice structures (CLSs) hold significant potential for use in structural components and optical mirrors in space exploration due to their light weight, high strength, and excellent dimensional stability. However, they face challenges such as poor curing performance and weak mechanical strength during the digital light processing (DLP) additive manufacturing process. In this study, SiC@Al2O3 powder was prepared, resulting in a 21 % reduction in absorptivity compared to bare SiC powder. The ceramic paste derived from this powder achieved a curing thickness of up to 80 mu m, exhibited a reduced over-curing width, and demonstrated a 75 % improvement in stability compared to bare SiC paste. Consequently, high-quality triply periodic minimal surfaces (TMPS) structured SiC@Al2O3 CLSs green bodies were successfully fabricated. By integrating precursor impregnation pyrolysis with the reaction melting infiltration (PIP-RMI) post-treatment densification method, SiC@Al2O3/Si CLSs were produced, exhibiting superior mechanical properties with low dimensional shrinkage. At 30 % volume fraction, the specific compressive strength of the primitive-TPMS SiC@Al2O3/Si CLSs reached 24.79 MPa. This study presents an effective method for fabricating SiC-based CLSs and establishes a foundation for the optimization of SiC ceramic fabrication processes.
引用
收藏
页码:42352 / 42362
页数:11
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