Effect of strain mode on the transverse thermoelectric effect of inclined La1-xCaxMnO3 thin films

被引:0
|
作者
Chen, Xi [1 ]
Tao, Bowan [1 ]
Zhao, Ruipeng [1 ]
Yang, Kai [2 ]
Yu, Yuhang [1 ]
Tian, Hongbo [1 ]
Zhu, Hongxu [1 ]
Li, Zhenzhe [1 ]
Xie, Tian [1 ]
Zhao, Mingyuan [1 ]
Xia, Yudong [3 ]
机构
[1] Univ Elect Sci & Technol China, Natl Key Lab Elect Thin Films & Integrated Devices, Chengdu 611731, Peoples R China
[2] China Aerodynam Res & Dev Ctr CARDC, Hyperveloc Aerodynam Inst, Mianyang 621000, Peoples R China
[3] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Peoples R China
基金
国家重点研发计划;
关键词
LASER-INDUCED VOLTAGE; TRANSPORT-PROPERTIES; ENHANCEMENT;
D O I
10.1063/5.0230804
中图分类号
O59 [应用物理学];
学科分类号
摘要
Strain engineering is an important way to control the physical properties of manganite thin films. Here, the effect of strain mode on the transverse thermoelectric (TTE) effect of inclined La1xCaxMnO3 (LCMO) thin films is investigated. The compressive strain enhances the electrical conductivity of the LCMO thin film, resulting in larger laser-induced voltage and faster response speed, which is suitable for high-energy pulse laser detection. Compared to that, the LCMO thin film on the STO substrate is ideal for heat-flux detection due to higher heat-flux sensitivity originating from lower conductivity. Still, it also has to withstand the loss of response speed. Moreover, it is first observed that the TTE voltage polarity of the LCMO thin film changes under different strain states. The measured results of LCMO thin films deposited LaAlO3 (LAO) substrate buffered with the SrTiO3 (STO) thin film and STO substrate buffered with the LAO thin film strongly support that the above results are indeed caused by the lattice strain. This work may be suitable for other material systems to modulate thermoelectric transport anisotropy and the TTE effect by strain.
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页数:10
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