Wideband absorptive frequency-selective reflector based on split-ring resonator embedded with chip resistor

被引:0
|
作者
Zhou, Bingyan [1 ]
Zhang, Binchao [2 ]
Chi, Baihong [3 ]
Jin, Cheng [1 ]
机构
[1] Beijing Inst Technol, Sch Cyberspace Sci & Technol, Beijing, Peoples R China
[2] Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing, Peoples R China
[3] China Acad Aerosp Sci & Innovat, Adv Mat & Energy Res Ctr, Beijing, Peoples R China
基金
中国国家自然科学基金;
关键词
absorption coefficients; frequency-selective surfaces; radar cross-sections; reflection;
D O I
10.1049/ell2.70068
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Here, a wideband absorptive frequency-selective reflector (AFSR) based on a split-ring resonator (SRR) embedded with chip resistors is proposed. The wide absorption band is achieved by the multimode resonances of two dipoles, and the insertion of SSRs is able to bypass the losses in the passband, thus allowing to open a wide window in addition to achieving broadband absorption performance. The upper structure consists of a dipole in series with two SSRs, while the lower dipole connects one SSR. The upper and lower structures are grouped together and rotated by 90 degrees around the Z-axis to form the final dual-polarization 3D-AFSR. The simulated results demonstrate that reflection coefficients below -10 dB are seen between 6.74-9.31 and 16.91-19.61 GHz under normal incidence, with a total fractional bandwidth of 46.8%. It also has a wide 3 dB reflection band which is obtained from 10.69 to 15.44 GHz, and the entire profile is 0.17 lambda L, where lambda L is lowest operating frequency. A wideband absorptive frequency-selective reflector based on split-ring resonator embedded with chip resistor is proposed here. The simulated results demonstrate that, reflection coefficients below -10 dB are seen between 6.74-9.31 and 16.91-19.61 GHz under normal incidence, with a total fractional bandwidth of 46.8%. It also has a wide reflection band from 10.69 to 15.44 GHz. image
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页数:3
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