Study on Quantum Well Intermixing Induced by Zn Impurities in GaInP/AlGaInP Red Semiconductor Lasers

被引：0
|
作者：
He, Tianjiang [1 ,2 ]
Liu, Suping [1 ]
Li, Wei [1 ]
Lin, Nan [1 ,2 ]
Xiong, Cong [1 ]
Ma, Xiaoyu [1 ,2 ]
机构：
[1] National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing,100083, China
[2] College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing,100049, China
来源：
Guangzi Xuebao/Acta Photonica Sinica | 2024年 / 53卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Zinc oxide
引用
收藏
相关论文
共 50 条
  • [1] Study on Quantum Well Intermixing Induced by Zn Impurities in GaInP/AlGaInP Red Semiconductor Lasers
    He Tianjiang
    Liu Suping
    Li Wei
    Lin Nan
    Xiong Cong
    Ma Xiaoyu
    ACTA PHOTONICA SINICA, 2024, 53 (01)
  • [2] Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–SiNdielectric layer
    Tianjiang He
    Suping Liu
    Wei Li
    Cong Xiong
    Nan Lin
    Li Zhong
    Xiaoyu Ma
    Journal of Semiconductors, 2022, (08) : 49 - 55
  • [3] Study of N ions implantation induced quantum well intermixing in GaInP/AlGaInP quantum well structures
    20153301174979
    Lin, Tao, 1600, Elsevier Ltd (650):
  • [4] Study of N ions implantation induced quantum well intermixing in GaInP/AlGaInP quantum well structures
    Lin, Tao
    Zhang, Haoqing
    Guo, Enmin
    Sun, Ruijuan
    Duan, Yupeng
    Lin, Nan
    Ma, Xiaoyu
    JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 650 : 336 - 341
  • [5] AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
    Lin, Tao
    Zheng, Kai
    Ma, Xiaoyu
    Guangxue Xuebao/Acta Optica Sinica, 2008, 28 (11): : 2209 - 2214
  • [6] Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
    Lin, T.
    Zheng, K.
    Wang, C. L.
    Ma, X. Y.
    JOURNAL OF CRYSTAL GROWTH, 2007, 309 (02) : 140 - 144
  • [7] High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing
    Zheng, Kai
    Lin, Tao
    Jiang, Li
    Wang, Jun
    Liu, Suping
    Wei, Xin
    Zhang, Guangze
    Ma, Xiaoyu
    Chinese Optics Letters, 2006, 4 (01) : 27 - 29
  • [8] Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer
    Tianjiang He
    Suping Liu
    Wei Li
    Cong Xiong
    Nan Lin
    Li Zhong
    Xiaoyu Ma
    Journal of Semiconductors, 2022, 43 (08) : 49 - 55
  • [9] Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si-Si3N4 dielectric layer
    He, Tianjiang
    Liu, Suping
    Li, Wei
    Xiong, Cong
    Lin, Nan
    Zhong, Li
    Ma, Xiaoyu
    JOURNAL OF SEMICONDUCTORS, 2022, 43 (08)
  • [10] CHARACTERISTIC TEMPERATURE OF GAINP/ALGAINP SINGLE QUANTUM WELL LASERS
    BOUR, DP
    CARLSON, NW
    EVANS, GA
    ELECTRONICS LETTERS, 1989, 25 (18) : 1243 - 1245
12345