Regulation of receptor function in NiCo2O4-SnO2 heterojunction for H2S detection at room temperature

被引:0
|
作者
Liu, Jianqiao [1 ,2 ,3 ]
Sun, Yue [1 ]
Deng, Shuai [1 ]
Zhang, Kuanguang [1 ]
Ding, Yang [1 ]
Fu, Ce [1 ]
Wang, Junsheng [3 ]
Zhang, Qianru [2 ]
机构
[1] Dalian Maritime Univ, Coll Informat Sci & Technol, Linghai Rd 1, Dalian 116026, Liaoning, Peoples R China
[2] Chinese Acad Agr Sci, Inst Agr Resources & Reg Planning, Beijing 100081, Peoples R China
[3] Dalian Maritime Univ, Ctr Microfluid Optoelect Sensing, Dalian 116026, Peoples R China
关键词
Receptor function; p-n transition; Heterojunction; Room temperature detection; GAS-SENSING PROPERTIES; THIN-FILMS; GRAIN-SIZE; NANORODS; SENSITIVITY; ADSORPTION; DEPLETION; SENSORS; DESIGN;
D O I
10.1016/j.ceramint.2024.10.003
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In recent years, the World Health Organization has increasingly emphasized air quality in production environments, leading to heightened societal demands for monitoring of pollutant gases at room temperature. Traditional semiconductor gas-sensitive materials, such as tin oxide (SnO2), have their gas-sensing performance largely limited by their receptor functions, resulting in common issues like low response and poor recovery at room temperature. Spinel-type bimetallic oxides, such as nickel cobaltate (NiCo2O4), offer a unique solution due to their rich adsorption sites on the surface, which provide distinctive receptor functions for detecting toxic gases at room temperature. Herein, NiCo2O4 is synthesized via a one-step hydrothermal method, with a porous spherical cluster structure, and combined with SnO2 to form a heterojunction. The NiCo2O4-SnO2 heterojunction film gas sensor exhibits excellent gas-sensing performance for H2S at room temperature, including high response, short response time, good repeatability, and selectivity. Additionally, the unique receptor functions of the NiCo2O4 were analyzed through first-principles calculations, revealing a semiconductor p-n conversion phenomenon in the presence of H2S gas. The composite also demonstrates a conversion from p-n heterojunction to nn homojunction during the sensing process, enhancing its gas-sensing performance. This work not only addresses the receptor function limitations of traditional gas-sensitive semiconductor but also provides a feasible approach for controlling carrier types in semiconductors.
引用
收藏
页码:50906 / 50920
页数:15
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