High-Efficiency 250-320 GHz Power Amplifiers Using InP-based MOS-HEMTs

被引：0
|
作者：
Kumazaki, Yusuke [1 ]
Ozaki, Shiro [1 ]
Okamoto, Naoya [1 ]
Hara, Naoki [1 ]
Nakasha, Yasuhiro [1 ]
Sato, Masaru [1 ]
Ohki, Toshihiro [1 ]
机构：
[1] Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa,243-0197, Japan
来源：
Asia-Pacific Microwave Conference Proceedings, APMC | 2022年 / 2022-November卷
关键词：
6g - Beyond 5g - Device technologies - Doped structures - Double sides - High electron-mobility transistors - Higher efficiency - Matchings - Metal-oxide-semiconductor high-electron mobility transistors - Tera Hertz;
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页码：276 / 278
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