Compensation of the Warpage of CVD Diamond Wafers using Intermediate Layers for Surface Activated Bonding

被引:0
|
作者
Wang, Junsha [1 ]
Suga, Tadatomo [1 ]
机构
[1] Meisei University, Collaborative Research Center, Tokyo,1918506, Japan
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Silica
引用
收藏
页码:169 / 170
相关论文
共 50 条
  • [31] Surface activated bonding between bulk single crystal diamond and bulk aluminum
    Fujino, Masahisa
    Hosoda, Naoe
    Suga, Tadatomo
    Ishikawa, Nobuhiro
    Kuwayama, Naoki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (08)
  • [32] Room Temperature Wafer Bonding Using Surface Activated Bonding Method
    Taniyama, Shingo
    Wang, Ying-Hui
    Fujino, Masahisa
    Suga, Tadatomo
    IEEE 9TH VLSI PACKAGING WORKSHOP IN JAPAN, 2008, : 141 - 144
  • [33] Bonding performance in atomic diffusion bonding of wafers using amorphous Si thin films with smooth surface
    Amino, T.
    Uomoto, M.
    Shimatsu, T.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SF)
  • [34] Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature
    Ohno, Yutaka
    Liang, Jianbo
    Yoshida, Hideto
    Shimizu, Yasuo
    Nagai, Yasuyoshi
    Shigekawa, Naoteru
    2021 7TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2021, : 12 - 12
  • [35] Integration of GaN-SiC and GaN-diamond by surface activated bonding methods
    Mu, Fengwen
    Suga, Tadatomo
    2019 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2019), 2019, : 198 - 199
  • [36] Bonding of CVD diamond thick films using an Ag-Cu-Ti brazing alloy
    Sun, FL
    Feng, JC
    Li, D
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2001, 115 (03) : 333 - 337
  • [37] Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films
    Amino, T.
    Uomoto, M.
    Shimatsu, T.
    2021 7TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2021, : 40 - 40
  • [38] Surface activated bonding of Au/Ta layers after degas annealing for MEMS packaging
    Matsumae, Takashi
    Yuichi, Kurashima
    Higurashi, Eiji
    Takagi, Hideki
    2018 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING AND IMAPS ALL ASIA CONFERENCE (ICEP-IAAC), 2018, : 270 - 275
  • [39] Room temperature bonding of Si and Si wafers by using Mo/Au nano-adhesion layers
    Wang, Kang
    Ruan, Kun
    Hu, Wenbo
    Wu, Shengli
    Wang, Hongxing
    MICROELECTRONIC ENGINEERING, 2019, 215
  • [40] Chemical modification of diamond surfaces using a chlorinated surface as an intermediate state
    Natl. Inst. for Res. in Inorg. Mat., 1-1 Namiki, Tsukuba, Ibaraki 305, Japan
    不详
    不详
    Diamond Relat. Mat., 10 (1136-1142):