Quasiperiodic Moire Reconstruction and Modulation of Electronic Properties in Twisted Bilayer Graphene Aligned with Hexagonal Boron Nitride

被引:0
|
作者
Li, Si-yu [1 ,2 ]
Xu, Zhiyue [3 ]
Wang, Yingbo [2 ]
Han, Yingzhuo [2 ]
Watanabe, Kenji [5 ]
Taniguchi, Takashi [6 ]
Song, Aisheng [3 ]
Ma, Tian-Bao [3 ]
Gao, Hong-Jun [1 ,2 ]
Jiang, Yuhang [4 ]
Mao, Jinhai [2 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[3] Tsinghua Univ, State Key Lab Tribol Adv Equipment, Beijing 100084, Peoples R China
[4] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[5] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan
[6] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan
基金
国家重点研发计划; 中国博士后科学基金; 中国国家自然科学基金;
关键词
MAGIC-ANGLE; UNCONVENTIONAL SUPERCONDUCTIVITY; INSULATORS; STATES;
D O I
10.1103/PhysRevLett.133.196401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Twisted van der Waals systems have emerged as intriguing arenas for exploring exotic strongly correlated and topological physics, with structural reconstruction and strain playing essential roles in determining their electronic properties. In twisted bilayer graphene aligned with hexagonal boron nitride (TBG/h-BN), the interplay between the two sets of moire<acute accent> patterns from graphene-graphene (G-G) and graphene-h-BN (G - h-BN) interfaces can trigger notable moire<acute accent> pattern reconstruction (MPR). Here, we present the quasiperiodic MPR in the TBG/h-BN with two similar moire<acute accent> wavelengths, wherein the MPR results from the incommensurate mismatch between the wavelengths of the G-G and G - h-BN moire<acute accent> patterns. The short-range, nearly ordered moire<acute accent> super-superstructures deviate from moire<acute accent> quasicrystal and are accompanied by inhomogeneous strain, thereby inducing spatially variable energy separations between the Van Hove singularities (VHs) in the band structures of the TBG near the magic angle. By tuning the carrier densities in our sample, correlated gaps at specific AA sites are observed, uncovering the quantumdot-like behavior and incoherent characteristics of the AA sites in the TBG. Our findings would give new hints on the microscopic mechanisms underlying the abundant novel quantum phases in the TBG/h-BN.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Electronic structure of graphene nanoribbons on hexagonal boron nitride
    Gani, Yohanes S.
    Abergel, D. S. L.
    Rossi, Enrico
    PHYSICAL REVIEW B, 2018, 98 (20)
  • [42] Electronic structure of superlattices of graphene and hexagonal boron nitride
    Kaloni, T. P.
    Cheng, Y. C.
    Schwingenschloegl, U.
    JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (03) : 919 - 922
  • [43] Structural and Electronic Properties of Interfaces in Graphene and Hexagonal Boron Nitride Lateral Heterostructures
    Zhang, Junfeng
    Xie, Weiyu
    Xu, Xiaohong
    Zhang, Shengbai
    Zhao, Jijun
    CHEMISTRY OF MATERIALS, 2016, 28 (14) : 5022 - 5028
  • [44] Epitaxial Intercalation Growth of Scalable Hexagonal Boron Nitride/Graphene Bilayer Moire Materials with Highly Convergent Interlayer Angles
    Wang, Shengnan
    Crowther, Jack
    Kageshima, Hiroyuki
    Hibino, Hiroki
    Taniyasu, Yoshitaka
    ACS NANO, 2021, 15 (09) : 14384 - 14393
  • [45] Unique Electronic Properties of the Twisted Bilayer Graphene
    Wang, Mingda
    Shan, Wenzhe
    Wang, Hongming
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 260 (05):
  • [46] Composite fermions and parton wavefunctions in twisted graphene on hexagonal boron nitride
    Salvador-Sanchez, J.
    Perez-Rodriguez, A.
    Clerico, V.
    Zheliuk, O.
    Zeitler, U.
    Watanabe, K.
    Taniguchi, T.
    Diez, E.
    Amado, M.
    Bellani, V.
    EUROPEAN PHYSICAL JOURNAL PLUS, 2024, 139 (11):
  • [47] An Atomistic Insight into Moire Reconstruction in Twisted Bilayer Graphene beyond the Magic Angle
    Dey, Aditya
    Chowdhury, Shoieb Ahmed
    Pena, Tara
    Singh, Sobhit
    Wu, Stephen M.
    Askari, Hesam
    ACS APPLIED ENGINEERING MATERIALS, 2023, 1 (03): : 970 - 982
  • [48] Tuning of the moire bands in graphene on hexagonal boron nitride by the periodic electrostatic gating
    Lin, Xianqing
    Su, Kelu
    Ni, Jun
    2D MATERIALS, 2023, 10 (03)
  • [49] Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride
    Leconte, N.
    Jung, J.
    2D MATERIALS, 2020, 7 (03)
  • [50] Energy gap tuning in graphene on hexagonal boron nitride bilayer system
    Slawinska, J.
    Zasada, I.
    Klusek, Z.
    PHYSICAL REVIEW B, 2010, 81 (15)