Large area CdxHg1–xTe photodiode with picosecond response time τRC

被引：0
|
作者：
Ismayilov, N.J. [1 ]
Rajabli, A.A. [1 ]
机构：
[1] Institute of Physics of the National Academy of Sciences of Azerbaijan, Baku,Az-1143, Azerbaijan
来源：
Fizika Nizkikh Temperatur | 2022年 / 48卷 / 02期
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Electric resistance - Manufacture
引用
收藏
页码：181 / 184
相关论文
共 50 条
  • [21] SPONTANEOUS AND STIMULATED RADIATION DUE TO BOUND EXCITONS IN CdxHg1 - xTe.
    Ivanov-Omskii, V.I.
    Kurbanov, K.R.
    Rustamov, R.B.
    Smirnov, V.A.
    Yuldashev, Sh.U.
    Soviet physics. Semiconductors, 1984, 18 (08): : 944 - 945
  • [22] Study of the effect of graded gap epilayers on the performance of CdxHg1−xTe photodiodes
    V. V. Vasil’ev
    D. G. Esaev
    A. F. Kravchenko
    V. M. Osadchii
    A. O. Suslyakov
    Semiconductors, 2000, 34 : 844 - 847
  • [23] Acid-base properties of the surfaces of CdxHg1–xTe solid solutions
    O. A. Fedyaeva
    Russian Journal of Physical Chemistry A, 2011, 85 : 2233 - 2236
  • [24] Fermi level pinning and electrical properties of irradiated CdxHg1−xTe alloys
    V. N. Brudnyi
    S. N. Grinyaev
    Semiconductors, 2001, 35 : 784 - 787
  • [25] Photoelectrical and electrical properties of polycrystalline CdxHg1−xTe layers on GaAs substrates
    V. A. Gnatyuk
    E. S. Gorodnichenko
    P. E. Mozol’
    A. I. Vlasenko
    Semiconductors, 2000, 34 : 255 - 259
  • [26] HOPPING CONDUCTION BETWEEN INTRINSIC DEFECTS IN CdxHg1 - xTe CRYSTALS.
    Elizarov, A.I.
    Bogoboyashchii, V.V.
    Berchenko, N.N.
    Soviet physics. Semiconductors, 1984, 18 (03): : 283 - 285
  • [27] PHOTOLUMINESCENCE OF EPITAXIAL n-TYPE CdxHg1 - xTe FILMS.
    Ivanov-Omskii, V.I.
    Minorov, K.E.
    Ogorodnikov, V.K.
    Rustamov, R.B.
    Smirnov, V.A.
    Yuldashev, Sh.U.
    Soviet physics. Semiconductors, 1984, 18 (09): : 1052 - 1053
  • [28] Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe
    P. Capper
    C. D. Maxey
    C. L. Jones
    J. E. Gower
    E. S. O’Keefe
    D. Shaw
    Journal of Electronic Materials, 1999, 28 : 637 - 648
  • [29] Ion implantation into heteroepitaxial CdxHg1–xTe grown by molecular-beam epitaxy
    A. V. Voitsekhovskii
    D. V. Grigor’ev
    N. Kh. Talipov
    Russian Physics Journal, 2008, 51 : 1001 - 1015
  • [30] Electrical activity of dislocations and point defects of deformation origin in CdxHg1−xTe crystals
    S. G. Gasan-zade
    S. V. Staryi
    M. V. Strikha
    G. A. Shepel’skii
    Semiconductors, 2003, 37 : 6 - 14
12345