Laser-induced reconfigurable wavefront control with a structured Ge2Sb2Te5-based metasurface

被引:1
|
作者
Hu, Sha [1 ]
Wang, Chao [1 ]
Du, Shuo [2 ]
Han, Zhuoxuan [1 ,2 ]
Hu, Nannan [1 ,2 ]
Gu, Changzhi [2 ]
机构
[1] Henan Univ Technol, Sch Phys, Zhengzhou 450001, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源
COMMUNICATIONS PHYSICS | 2024年 / 7卷 / 01期
基金
中国国家自然科学基金;
关键词
BROAD-BAND; PHASE; ABSORPTION;
D O I
10.1038/s42005-024-01846-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Phase change materials have been widely exploited in active metasurfaces due to their large index contrast. Despite recent advances in phase-change metasurfaces, it remains a challenge to integrate diverse reconfigurable optical functionalities into a single metasurface. Here, we demonstrate an effective strategy to realize reconfigurable wavefront control by combining a Ge2Sb2Te5-rod array with laser writing technology. Through arbitrarily modifying the position and power of laser source, the laser writing process helps to realize site-selective and multi-level phase change of Ge2Sb2Te5 rods. Due to multi-level switching for optical properties of Ge2Sb2Te5 material, the Ge2Sb2Te5-rod array offers complete phase control and high amplitude modulation. Subsequently, various optical devices are designed in numerical simulation, including a phase-only hologram, dynamic meta-deflectors, a grayscale image and a perfect absorber. The structured Ge2Sb2Te5-based metasurface with the combination of laser writing technology offers an effective way to explore various types of optical functionalities in the same device. A tunable metasurface exhibiting dynamically optical functionalities is highly desired in practice. Here, the authors demonstrate a dynamically reconfigurable metasurface by combining the Ge2Sb2Te5-rod array with laser engineering technology, for which various optical functionalities can be randomly and reversibly written and erased.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices
    Woo, Jiyong
    Jung, Seungjae
    Siddik, Manzar
    Cha, Euijun
    Sadaf, Sharif Md.
    Hwang, Hyunsang
    APPLIED PHYSICS LETTERS, 2011, 99 (16)
  • [42] Investigations on transient regime of Ge2Sb2Te5-based vertical photodetector integrated with silicon-on-insulator waveguide
    Srivastava, Vibhu
    Mishra, Prateek
    Sunny
    PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS, 2020, 40
  • [43] Crystallization of amorphous Ge2Sb2Te5 films induced by an ultraviolet laser
    Zhou, W. P.
    Liu, F. R.
    Bai, N.
    Wan, Y. H.
    Lin, X.
    Chen, J. M.
    APPLIED SURFACE SCIENCE, 2013, 285 : 97 - 101
  • [44] Minimum time for laser induced amorphization of Ge2Sb2Te5 films
    Weidenhof, V
    Pirch, N
    Friedrich, I
    Ziegler, S
    Wuttig, M
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (02) : 657 - 664
  • [45] Tunable dual-functional metasurface based on Ge2Sb2Te5 and VO2
    Lu, Xinhui
    Yang, Lei
    Yang, Xiaohui
    Ye, Yunxia
    Ren, Xudong
    OPTICS COMMUNICATIONS, 2025, 577
  • [46] Realization of a photoswitchable anapole metasurface based on phase change material Ge2Sb2Te5
    Wang, Xiaoyun
    Lu, Xiaojing
    Xia, Zhengwei
    APPLIED OPTICS, 2023, 62 (35) : 9253 - 9260
  • [47] Efficient dynamic tunable metasurface based on Ge2Sb2Te5 in the near infrared band
    Liu, Zexu
    Zhang, Bolun
    Li, Yuke
    Lou, Yipan
    Lian, Yi
    Jiang, Chang
    Wang, Jicheng
    APPLIED OPTICS, 2023, 62 (20) : 5508 - 5515
  • [48] Tunable NIR absorption in a Ge2Sb2Te5-based 1D asymmetric nonlinear hybrid nanostructure
    Rashidi, Shiva
    Rashidi, Arezou
    Entezar, Samad Roshan
    OPTICS AND LASER TECHNOLOGY, 2023, 157
  • [49] Near-infrared doublet zoom lens based on Ge2Sb2Te5 metasurface
    Yang, Lei
    Zhang, Minjie
    Yang, Xiaohui
    Liu, Yu
    Ren, Xudong
    Zhang, Yun
    Chen, Mingyang
    Ren, Yunpeng
    Ye, Yunxia
    JOURNAL OF OPTICS, 2022, 24 (05)
  • [50] Integration of ZnO-Based Resistive-Switching Memory and Ge2Sb2Te5-Based Phase-Change Memory
    Chen, Chih-Ying
    Feng, Yu-Hsiu
    Lu, Hong-Lin
    Chang, Feng-En
    Chen, Jui-Yuan
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (05) : 2583 - 2589