The Response Time of the High Operating Temperature and Very Long Wavelength Type-II Superlattice InAs/InAsSb Interband Cascade Photodetectors

被引：0
|
作者：
Dabrowski, Karol [1 ,2 ]
Kubiszyn, Lukasz [1 ]
Gawron, Waldemar [1 ]
Seredynski, Bartaomiej [1 ]
Michalczewski, Krystian [1 ]
Wu, Chao-Hsin [3 ]
Wu, Yuh-Renn [3 ]
Martyniuk, Piotr [2 ]
机构：
[1] VIGO Photon, , Mazowiecki, PL-05850 Mazowiecki, Poland
[2] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland
[3] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 11期
关键词：
Detectors; Temperature measurement; Photodetectors; Gallium arsenide; Substrates; Resistance; Time factors; Time response; InAs/InAsSb T2SL; VLWIR; ICIP; INFRARED PHOTODETECTORS; THICKNESS; GROWTH;
D O I：
10.1109/LED.2024.3462152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper shows III-V InAs/InAsSb type-II superlattice (T2SL) very long wavelength (VLWIR, 100% cut-off wavelength, lambda(cut - off) similar to 16.5 mu m at 330 K) interband cascade photodetector designed to operate > 300 K. The device circumvents the low quantum efficiency (QE) and resistance issues of the conventional "thick absorber" photovoltaic detectors designed for high operating temperature (HOT, >300 K) conditions. The 3-stage detector was grown by molecular beam epitaxy (MBE) on the lattice-mismatched GaAs substrates and GaSb buffer layer where stages were connected by the highly doped typical n+/p+ tunnel junctions. The time constant of the unbiased device reaches similar to 2.83 ns (210 K) and similar to 0.5 ns (330 K).
引用
收藏
页码：2158 / 2161
页数：4
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