The Response Time of the High Operating Temperature and Very Long Wavelength Type-II Superlattice InAs/InAsSb Interband Cascade Photodetectors

被引：0
|
作者：
Dabrowski, Karol [1 ,2 ]
Kubiszyn, Lukasz [1 ]
Gawron, Waldemar [1 ]
Seredynski, Bartaomiej [1 ]
Michalczewski, Krystian [1 ]
Wu, Chao-Hsin [3 ]
Wu, Yuh-Renn [3 ]
Martyniuk, Piotr [2 ]
机构：
[1] VIGO Photon, , Mazowiecki, PL-05850 Mazowiecki, Poland
[2] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland
[3] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 11期
关键词：
Detectors; Temperature measurement; Photodetectors; Gallium arsenide; Substrates; Resistance; Time factors; Time response; InAs/InAsSb T2SL; VLWIR; ICIP; INFRARED PHOTODETECTORS; THICKNESS; GROWTH;
D O I：
10.1109/LED.2024.3462152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper shows III-V InAs/InAsSb type-II superlattice (T2SL) very long wavelength (VLWIR, 100% cut-off wavelength, lambda(cut - off) similar to 16.5 mu m at 330 K) interband cascade photodetector designed to operate > 300 K. The device circumvents the low quantum efficiency (QE) and resistance issues of the conventional "thick absorber" photovoltaic detectors designed for high operating temperature (HOT, >300 K) conditions. The 3-stage detector was grown by molecular beam epitaxy (MBE) on the lattice-mismatched GaAs substrates and GaSb buffer layer where stages were connected by the highly doped typical n+/p+ tunnel junctions. The time constant of the unbiased device reaches similar to 2.83 ns (210 K) and similar to 0.5 ns (330 K).
引用
收藏
页码：2158 / 2161
页数：4
相关论文
共 50 条
  • [1] Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
    Wu, Donghai
    Li, Jiakai
    Dehzangi, Arash
    Razeghi, Manijeh
    AIP ADVANCES, 2020, 10 (02)
  • [2] Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature
    Gawron, Waldemar
    Kubiszyn, Lukasz
    Michalczewski, Krystian
    Piotrowski, Jozef
    Martyniuk, Piotr
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (09) : 1487 - 1490
  • [3] Mid-wavelength infrared type-II InAs/GaSb superlattice interband cascade photodetectors
    Pusz, Wioletta
    Kowalewski, Andrzej
    Martyniuk, Piotr
    Gawron, Waldemar
    Plis, Elena
    Krishna, Sanjay
    Rogalski, Antoni
    OPTICAL ENGINEERING, 2014, 53 (04)
  • [4] Response time of the type-II superlattice InAs/InAsSb mid-infrared interband cascade photodetector for HOT conditions
    Dabrowski, Karol
    Gawron, Waldemar
    Kubiszyn, Lukasz
    Seredynski, Bartlomiej
    Michalczewski, Krystian
    Wu, Chao-Hsin
    Wu, Yuh-Renn
    Martyniuk, Piotr
    OPTICS AND LASER TECHNOLOGY, 2025, 182
  • [5] Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling
    Michalczewski, Krystian
    Martyniuk, Piotr
    Kubiszyn, Lukasz
    Wu, Chao-Hsin
    Wu, Yuh-Renn
    Jurenczyk, Jarek
    Rogalski, Antoni
    Piotrowski, Jozef
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1396 - 1398
  • [6] Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber
    Murawski, Krzysztof
    Majkowycz, Kinga
    Kopytko, Malgorzata
    Manyk, Tetiana
    Dabrowski, Karol
    Seredynski, Bartlomiej
    Kubiszyn, Lukasz
    Martyniuk, Piotr
    NANOMATERIALS, 2024, 14 (17)
  • [7] InAs-based type-II superlattice long wavelength photodetectors
    Wang, Fangfang
    Chen, Jianxin
    Xu, Zhicheng
    Zhou, Yi
    He, Li
    QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIII, 2016, 9755
  • [8] Mid-wavelength infrared nBn photodetectors based on InAs/InAsSb type-II superlattice with an AlAsSb/InAsSb superlattice barrier
    Shan, Yi-Fan
    Wu, Dong-Hai
    Xie, Ruo-Yu
    Zhou, Wen-Guang
    Chang, Fa-Ran
    Li, Nong
    Wang, Guo-Wei
    Jiang, Dong-Wei
    Hao, Hong-Yue
    Xu, Ying-Qiang
    Niu, Zhi-Chuan
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2024, 43 (04) : 450 - 456
  • [9] High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier
    Wu, Donghai
    Li, Jiakai
    Dehzangi, Arash
    Razeghi, Manijeh
    INFRARED PHYSICS & TECHNOLOGY, 2020, 109
  • [10] Demonstration of the long wavelength InAs/InAsSb type-II superlattice based methane sensor
    Martyniuk, Piotr
    Wojtas, Jacek
    Michalczewski, Krystian
    Gawron, Waldemar
    Mikolajczyk, Janusz
    Krishna, Sanjay
    SENSORS AND ACTUATORS A-PHYSICAL, 2021, 332 (332)
12345