Effect of Gate Pad Layout on Thermal Impedance of SiC-MOSFET

被引：0
|
作者：
Kato, F. [1 ]
Sato, S. [1 ]
Hozoji, H. [1 ]
Ikegawa, M. [1 ]
Sakai, A. [1 ]
Watanabe, K. [1 ]
Harada, S. [1 ]
Sato, H. [1 ]
机构：
[1] National Institute of Advanced Industrial Science and Technology (AIST), Advanced Power Electronics Research Center (ADPERC), Tsukuba, Ibaraki, Japan
来源：
2022 International Conference on Electronics Packaging, ICEP 2022 | 2022年
关键词：
Compendex;
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学科分类号：
摘要：
Silicon carbide
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页码：149 / 150
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