A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process

被引：0
|
作者：
Shen, Yi [1 ]
Luo, Jiang [1 ]
Zhao, Wei [1 ]
Dai, Jun-Yan [2 ]
Cheng, Qiang [2 ]
机构：
[1] School of Electronics and Information, Hangzhou Dianzi University, Hangzhou,310018, China
[2] State Key Laboratory of Millimeter Waves, Southeast University, Nanjing,210096, China
来源：
Micromachines | 2024年 / 15卷 / 10期
关键词：
All Open Access; Gold;
D O I：
10.3390/mi15101248
中图分类号：
学科分类号：
摘要：
Low noise amplifiers
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