Atomic layer etching of titanium nitride with surface modification by Cl radicals and rapid thermal annealing

被引：0
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作者：
Miyoshi, Nobuya [1 ]
McDowell, Nicholas [1 ]
Kobayashi, Hiroyuki [1 ]
机构：
[1] Hitachi High-Tech America Inc., 6357 NE Evergreen Parkway, Building D, Hillsboro,OR,97124, United States
来源：
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 2022年 / 40卷 / 03期
关键词：
Amorphous carbon - Crystal atomic structure - Silica - Hafnium oxides - Titanium nitride - Atomic layer deposition - Silicon - Atoms - Chlorine - Etching - Rapid thermal annealing;
D O I：
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