Atomic layer etching of titanium nitride with surface modification by Cl radicals and rapid thermal annealing

被引：0
|
作者：
Miyoshi, Nobuya [1 ]
McDowell, Nicholas [1 ]
Kobayashi, Hiroyuki [1 ]
机构：
[1] Hitachi High-Tech America Inc., 6357 NE Evergreen Parkway, Building D, Hillsboro,OR,97124, United States
来源：
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 2022年 / 40卷 / 03期
关键词：
Amorphous carbon - Crystal atomic structure - Silica - Hafnium oxides - Titanium nitride - Atomic layer deposition - Silicon - Atoms - Chlorine - Etching - Rapid thermal annealing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Atomic layer etching of titanium nitride with surface modification by Cl radicals and rapid thermal annealing
    Miyoshi, Nobuya
    McDowell, Nicholas
    Kobayashi, Hiroyuki
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2022, 40 (03):
  • [2] Atomic layer etching of Sn by surface modification with H and Cl radicals
    Kim, Doo San
    Jang, Yun Jong
    Kim, Ye Eun
    Gil, Hong Seong
    Jeong, Byeong Hwa
    Yeom, Geun Young
    NANOTECHNOLOGY, 2023, 34 (03)
  • [3] Plasma atomic layer etching for titanium nitride at low temperatures
    Shim, Dahee
    Kim, Jihyun
    Kim, Yongjae
    Chae, Heeyeop
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2022, 40 (02):
  • [4] Surface chemistry of thermal atomic layer etching
    George, Steven
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2018, 255
  • [5] Rapid thermal-cyclic atomic-layer etching of titanium nitride in CHF3/O2 downstream plasma
    Shinoda, Kazunori
    Miyoshi, Nobuya
    Kobayashi, Hiroyuki
    Izawa, Masaru
    Ishikawa, Kenji
    Hori, Masaru
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (47)
  • [6] REACTION OF TITANIUM WITH SILICON-NITRIDE UNDER RAPID THERMAL ANNEALING
    MORGAN, AE
    BROADBENT, EK
    SADANA, DK
    APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1236 - 1238
  • [7] In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals
    Nakane, Kazuya
    Vervuurt, Rene H. J.
    Tsutsumi, Takayoshi
    Kobayashi, Nobuyoshi
    Hori, Masaru
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (40) : 37263 - 37269
  • [8] Surface reaction during thermal atomic layer etching of aluminum oxide films using fluorine radicals and trimethylaluminum
    Kim, Yewon
    Kim, Okhyeon
    Cho, Gyejun
    Kim, Hye-Lee
    Kim, Minsu
    Cho, Byungchul
    Park, Sangjoon
    Jung, Jongwan
    Lee, Won-Jun
    APPLIED SURFACE SCIENCE, 2023, 641
  • [9] Atomic layer etching of gallium nitride (0001)
    Kauppinen, Christoffer
    Khan, Sabbir Ahmed
    Sundqvist, Jonas
    Suyatin, Dmitry B.
    Suihkonen, Sami
    Kauppinen, Esko I.
    Sopanen, Markku
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (06):
  • [10] Thermal annealing of superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
    Gonzalez Diaz-Palacio, Isabel
    Wenskat, Marc
    Deyu, Getnet Kacha
    Hillert, Wolfgang
    Blick, Robert H.
    Zierold, Robert
    JOURNAL OF APPLIED PHYSICS, 2023, 134 (03)
12345