High current density 1.2 kV class HfO2-gated vertical GaN trench MOSFETs

被引：0

作者：

Binder, Andrew T. ^{[1
]}

Steinfeldt, Jeffrey ^{[1
]}

Reilly, Kevin J. ^{[1
]}

Floyd, Richard S. ^{[1
]}

Dickens, Peter T. ^{[1
]}

Klesko, Joseph P. ^{[1
]}

Allerman, Andrew A. ^{[1
]}

Kaplar, Robert J. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87123 USA

来源：

APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 10期

关键词：

GaN trench MOSFET; hafnium dioxide; power semiconductor devices; gallium nitride power devices; high-k gate dielectrics; GATE; PERFORMANCE; DEPOSITION; MOBILITY; DEVICES; OXIDES; IMPACT; HFO2;

D O I：

10.35848/1882-0786/ad85c1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work reports on high current density 1.2 kV class HfO2-gated vertical GaN trench metal-oxide-semiconductor field-effect transistors (MOSFETs). An output current density of 330 mA mm(-1) is reported at a drain bias of five volts, which, to our knowledge, is over ten-times the highest reported values for 1.2 kV class GaN or SiC MOSFETs. This work also showcases a significant achievement in demonstrating substantially thick (100 nm) HfO2 on GaN with simultaneous low leakage current (0.5 nA at 2 MV cm(-1)), a high breakdown strength (5.2 MV cm(-1)), and a high recorded dielectric constant (22.0).

引用

页数：5

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