Impacts of Cavity Thickness and Insulating Material on Dielectric Modulated Trench Junction-less Double Gate Field Effect Transistor for Biosensing Applications

被引：0
|
作者：
Bhattacherjee, Swagata [1 ]
Dhar, Palasri [2 ]
Roy, Sunipa [2 ]
机构：
[1] Department of Physics, JIS College of Engineering, Kalyani, India
[2] Department of Electronics and Communication Engineering, Guru Nanak Institute of Technology, Center of Nanoscience and Technology Research, Kolkata, India
来源：
Current Materials Science | 2024年 / 17卷 / 05期
关键词：
D O I：
10.2174/0126661454274311231011070702
中图分类号：
学科分类号：
摘要：
Gate dielectrics
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页码：513 / 521
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