Valley polarization in two-dimensional tetragonal altermagnetism

被引:0
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作者
Guo, San-Dong [1 ]
Guo, Xiao-Shu [1 ]
Wang, Guangzhao [2 ]
机构
[1] School of Electronic Engineering, Xi'An University of Posts and Telecommunications, Xi'an,710121, China
[2] Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, School of Electronic Information Engineering, Yangtze Normal University, Chongqing,408100, China
关键词
Ferromagnetic materials - Ferromagnetism - Frequency shift keying - Magnetization - Monolayers - Rock mechanics - Single crystals - Spin dynamics - Spin polarization;
D O I
10.1103/PhysRevB.110.184408
中图分类号
学科分类号
摘要
The altermagnetism caused by alternating crystal environment provides a unique opportunity for designing new type of valley polarization. Here, we propose a way to realize valley polarization in two-dimensional (2D) tetragonal altermagnetism by regulating the direction of magnetization. The valley polarization along with spin polarization will arise when the orientation of magnetization breaks the C4z lattice rotational symmetry, particularly in the conventional in-plane x or y directions. When the direction of magnetization switches between the x and y direction, the valley and spin polarizations will be reversed. This is different from the widely studied valley polarization, which occurs in out-of-plane hexagonal magnetic materials with valley physics at the -K/K point. Followed by first-principles calculations, our proposal is demonstrated in a 2D Janus tetragonal altermagnetic Fe2MoS2Se2 monolayer with good stability but very small valley splitting of 1.6 meV. To clearly see the feasibility of our proposal, an unrealistic material Ru2MoS2Se2 is used to show large valley splitting of 90 meV. In fact, our proposal can be readily extended to 2D tetragonal ferromagnetic (FM) materials, for example FM Fe2I2 monolayer. Our findings can enrich the valley physics, and provide new type of valley materials. © 2024 American Physical Society.
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