Germanium quantum well with two subbands occupied: Kinetic properties

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作者：
Berkutov, I.B. [1 ,2 ,3 ]
Andrievskii, V.V. [1 ,2 ]
Komnik, Y.F. [1 ]
Mironov, O.A. [2 ,4 ]
机构：
[1] B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, 47 Nauky Ave., Kharkiv,61103, Ukraine
[2] Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, Wroclaw,50-422, Poland
[3] Department of Physics, North Carolina State University, Raleigh,NC,27695, United States
[4] Department of Physics, University of Warwick, Coventry,CV4 7AL, United Kingdom
来源：
Fizika Nizkikh Temperatur | 2017年 / 43卷 / 10期
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摘要：
Multisubband transport of charge carriers in the p-type Si0.4Ge0.6/Ge/Si0.4Ge0.6 heterostructure has been in-vestigated by means of magnetotransport measurements at low temperatures and high magnetic fields. Two fre-quency Shubnikov-de Haas oscillations indicate occupation of two subbands. This allows us to determine the densities and mobilities of the charge carriers on each subband. Shubnikov-de Haas oscillations reveal two 2D conduction subbands with carrier effective masses of 0.112m0 and 0.131m0. The quantum Hall ferromagnetic states which results from the crossing of two Landau levels with opposite spin belongings to different subband was observed in SiGe systems for the first time. © I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, and O.A. Mironov, 2017.
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页码：1515 / 1520
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