Microhardness testing of GaAs single crystals

被引：0
|
作者：
Bergner, Frank [1 ]
Bergmann, Ute [1 ]
Schaper, Michael [1 ]
Hammer, Ralf [2 ]
Jurisch, Manfred [2 ]
机构：
[1] Dresden, Germany
[2] Freiberg, Germany
来源：
Materialpruefung/Materials Testing | 2001年 / 43卷 / 04期
关键词：
Silicon wafers - Cracks - III-V semiconductors - Indentation - Single crystals - Fracture toughness - Elasticity - Semiconducting gallium - Ultrasonic applications;
D O I：
10.1515/mt-2001-430406
中图分类号：
学科分类号：
摘要：
The paper deals with basic mechanical properties of semi-conducting GaAs. The investigations were performed on (100) oriented single crystals both undoped and doped with C, Si/B or Te, resp. The elastic properties are characterized by means of ultrasonic time-of-flight measurements. The Vickers indentation technique has been applied in order to evaluate microhardness, fracture toughness as well as the load dependence of deformation and cracking. Concerning the elastic properties, hardness and toughness, the effect of doping proved to be either insignificant or small. First attempts to obtain information on internal stress and critical load for radial cracking have been undertaken. © 2001 Carl Hanser Verlag. All rights reserved.
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页码：117 / 122
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