Microhardness testing of GaAs single crystals

The paper deals with basic mechanical properties of semi-conducting GaAs. The investigations were performed on (100) oriented single crystals both undoped and doped with C, Si/B or Te, resp. The elastic properties are characterized by means of ultrasonic time-of-flight measurements. The Vickers indentation technique has been applied in order to evaluate microhardness, fracture toughness as well as the load dependence of deformation and cracking. Concerning the elastic properties, hardness and toughness, the effect of doping proved to be either insignificant or small. First attempts to obtain information on internal stress and critical load for radial cracking have been undertaken. © 2001 Carl Hanser Verlag. All rights reserved.