Room temperature nanoimprint technology using hydrogen silsequioxane (HSQ)

被引：0
|
作者：
Igaku, Yutaka [1 ]
Matsui, Shinji [1 ]
Ishigaki, Hiroyuki [1 ]
Fujita, Jun-Ichi [2 ]
Ishida, Masahiko [3 ]
Ochiai, Yukinori [1 ]
Namatsu, Hideo [3 ]
Komuro, Masanori [4 ]
Hiroshima, Hiroshi [3 ]
机构：
[1] Laboratory of Advanced Science and Technology, Himeji Institute of Technology, Hyogo 678-1201, Japan
[2] NEC Fundamental Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
[3] NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
[4] Advanced Semiconductor Research Center, AIST, 1-1 Umezono 1-chome, Tsukuba, Ibaraki 305-8501, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 6 B期
关键词：
D O I：
10.1143/jjap.41.4198
中图分类号：
学科分类号：
摘要：
14
引用
收藏
页码：4198 / 4202
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