Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs

被引：0
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作者：
Osaka Univ., Yamadaoka, Suita, 565-0871 [1 ]
不详 [2 ]
不详 [3 ]
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来源：
Zairyo | 2007年 / 9卷 / 880-885期
关键词：
Semiconducting gallium arsenide;
D O I：
10.2472/jsms.56.880
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摘要：
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页码：880 / 885
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