Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals

被引：0
|
作者：
Qisheng, Chen [1 ]
Guyu, Deng [1 ]
Ebadian, Ali [2 ]
Prasad, Vish [2 ]
机构：
[1] Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080, China
[2] Department of Mechanical and Materials Engineering, Florida International University, 10555 W Flagler St, Miami, FL 33174, United States
来源：
Journal of Rare Earths | 2007年 / 25卷 / SUPPL. 2期
基金：
中国国家自然科学基金;
关键词：
14;
D O I：
10.1016/S1002-0721(07)60501-8
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：345 / 348
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