Study on method for pulsed laser simulating SRAM single event upset

被引:0
|
作者
机构
[1] Shangguan, Shi-Peng
[2] Feng, Guo-Qiang
[3] 1,Yu, Yong-Tao
[4] 1,Jiang, Yu-Guang
[5] Han, Jian-Wei
来源
Shangguan, S.-P. | 1600年 / Atomic Energy Press卷 / 47期
关键词
Laser pulses;
D O I
10.7538/yzk.2013.47.11.2137
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Impact of temperature on single event upset measurement by heavy ions in SRAM devices
    刘天奇
    耿超
    张战刚
    赵发展
    古松
    童腾
    习凯
    刘刚
    韩郑生
    侯明东
    刘杰
    Journal of Semiconductors, 2014, (08) : 102 - 107
  • [22] Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
    Pown, M.
    Lakshmi, B.
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 : 1397 - 1403
  • [23] Impact of Package on Neutron Induced Single Event Upset in 20 nm SRAM
    Uemura, Taiki
    Kato, Takashi
    Matsuyama, Hideya
    Hashimoto, Masanori
    2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2015,
  • [24] Influence of fin width on single event-upset characteristics of FinFET SRAM
    Li, Gensong
    An, Xia
    Ren, Zhexuan
    Huang, Ru
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (05)
  • [25] Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM
    TANG Du
    LI YongHong
    ZHANG GuoHe
    HE ChaoHui
    FAN YunYun
    Science China(Technological Sciences), 2013, (03) : 780 - 785
  • [26] Impact of temperature on single event upset measurement by heavy ions in SRAM devices
    Liu Tianqi
    Geng Chao
    Zhang Zhangang
    Zhao Fazhan
    Gu Song
    Tong Teng
    Xi Kai
    Liu Gang
    Han Zhengsheng
    Hou Mingdong
    Liu Jie
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (08)
  • [27] A novel layout for single event upset mitigation in advanced CMOS SRAM cells
    QIN JunRui
    LI DaWei
    CHEN ShuMing
    Science China(Technological Sciences), 2013, 56 (01) : 143 - 147
  • [28] SINGLE EVENT UPSET RATE ESTIMATES FOR A 16-K CMOS SRAM
    BROWNING, JS
    KOGA, R
    KOLASINSKI, WA
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4133 - 4139
  • [29] Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices
    Zhang, Zhangang
    Liu, Jie
    Sun, Youmei
    Hou, Mingdong
    Tong, Teng
    Gu, Song
    Liu, Tianqi
    Geng, Chao
    Xi, Kai
    Yao, Huijun
    Luo, Jie
    Duan, Jinglai
    Mo, Dan
    Su, Hong
    Zhang, Zhangang
    Lei, Zhifeng
    En, Yunfei
    Huang, Yun
    PROCEEDINGS OF 2014 10TH INTERNATIONAL CONFERENCE ON RELIABILITY, MAINTAINABILITY AND SAFETY (ICRMS), VOLS I AND II, 2014, : 114 - 119
  • [30] A novel layout for single event upset mitigation in advanced CMOS SRAM cells
    JunRui Qin
    DaWei Li
    ShuMing Chen
    Science China Technological Sciences, 2013, 56 : 143 - 147