Effect of defects on InAs/AlSb/GaSb resonant interband tunneling diodes

被引：0
|
作者：
Magno, R. [1 ]
Bracker, A.S. [1 ]
Bennett, B.R. [1 ]
Twigg, M.E. [1 ]
Weaver, B.D. [1 ]
机构：
[1] Naval Research Lab, Washington, United States
来源：
| 2000年
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] INTERBAND TUNNELING IN POLYTYPE GASB/ALSB/INAS HETEROSTRUCTURES
    LUO, LF
    BERESFORD, R
    WANG, WI
    APPLIED PHYSICS LETTERS, 1989, 55 (19) : 2023 - 2025
  • [32] COMPOSITIONAL AND STRUCTURAL-ANALYSIS OF ALSB(AS) TUNNELING BARRIERS IN INAS/ALSB(AS)/GASB RESONANT INTERBAND-TUNNELING STRUCTURES
    WAGNER, J
    SCHMITZ, J
    OBLOH, H
    KOIDL, P
    APPLIED PHYSICS LETTERS, 1995, 67 (20) : 2963 - 2965
  • [33] HOLE AND INTERBAND RESONANT TUNNELING IN GAAS/GAALAS AND INAS/GASB/ALSB TUNNEL STRUCTURES
    KILEDJIAN, MS
    SCHULMAN, JN
    WANG, KL
    ROUSSEAU, KV
    SURFACE SCIENCE, 1992, 267 (1-3) : 405 - 408
  • [34] THE EFFECTS OF GASB/INAS BROKEN GAP ON INTERBAND TUNNELING CURRENT OF A GASB/INAS/GASB/ALSB/INAS TUNNELING STRUCTURE
    CHEN, JF
    CHO, AY
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4432 - 4435
  • [35] Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
    Bennett, BR
    Bracker, AS
    Magno, R
    Boos, JB
    Bass, R
    Park, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1650 - 1652
  • [36] A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes
    Mutamba, K
    Sigurdardottir, A
    Vogt, A
    Hartnagel, HL
    Li, EH
    APPLIED PHYSICS LETTERS, 1998, 72 (13) : 1629 - 1631
  • [37] Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes
    Fay, P
    Jiang, L
    Xu, Y
    Bernstein, GH
    Chow, DH
    Schulman, JN
    Dunlap, HL
    De Los Santos, HJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) : 1282 - 1284
  • [38] STATIC RANDOM-ACCESS MEMORIES BASED ON RESONANT INTERBAND TUNNELING DIODES IN THE INAS/GASB/ALSB MATERIAL SYSTEM
    SHEN, J
    KRAMER, G
    TEHRANI, S
    GORONKIN, H
    TSUI, R
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (05) : 178 - 180
  • [39] INVESTIGATION OF MAGNETO-TUNNELING PROCESSES IN INAS/ALSB/GASB BASED RESONANT INTERBAND TUNNELING STRUCTURES
    OBLOH, H
    SCHMITZ, J
    RALSTON, JD
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 861 - 866
  • [40] CARRIER TRANSPORT IN INAS/ALSB/GASB INTERBAND TUNNELING STRUCTURES
    LIU, MH
    WANG, YH
    HOUNG, MP
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) : 6222 - 6226
12345