Effect of defects on InAs/AlSb/GaSb resonant interband tunneling diodes

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作者：
Magno, R. [1 ]
Bracker, A.S. [1 ]
Bennett, B.R. [1 ]
Twigg, M.E. [1 ]
Weaver, B.D. [1 ]
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[1] Naval Research Lab, Washington, United States
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| 2000年
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