Raman and photoluminescence spectra on type II InAs/GaSb superlattices

被引：0
|
作者：
Guo, Jie [1 ,2 ]
Sun, Wei-Guo [1 ,2 ]
Peng, Zhen-Yu [2 ]
Zhou, Zhi-Qiang [3 ]
Xu, Ying-Qiang [3 ]
Niu, Zhi-Chuan [3 ]
机构：
[1] Material School, Northwest Polytechnical University, Xi'an 710000, China
[2] China Airborne Missile Academy, Luoyang 471009, China
[3] Institute of Semiconductors, CAS, Beijing 100083, China
来源：
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2009年 / 38卷 / 02期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Temperature
引用
收藏
页码：278 / 281
相关论文
共 50 条
  • [41] MOCVD growth of InAs/GaSb type-II superlattices on InAs substrates for short wavelength infrared detection
    Chen, Ying
    Liu, Jiafeng
    Zhao, Yu
    Teng, Yan
    Hao, Xiujun
    Li, Xin
    Zhu, He
    Zhu, Hong
    Wu, Qihua
    Huang, Yong
    INFRARED PHYSICS & TECHNOLOGY, 2020, 105 (105)
  • [42] Pressure-tuned resonance Raman scattering in InAs/GaSb superlattices
    Lyapin, SG
    Lomsadze, AV
    Trojan, IA
    Klipstein, PC
    Mason, NJ
    Walker, PJ
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (01): : 321 - 327
  • [43] Pressure-Tuned Resonance Raman Scattering In InAs/GaSb Superlattices
    Lyapin, S. G.
    Lomsadze, A. V.
    Trojan, I. A.
    Klipstein, P. C.
    1996, (198):
  • [44] N-type ohmic contact on type-II InAs/GaSb strained layer superlattices
    Kim, H. S.
    Plis, E.
    Rodriguez, J. B.
    Bishop, G.
    Sharma, Y. D.
    Krishna, S.
    ELECTRONICS LETTERS, 2008, 44 (14) : 881 - U213
  • [45] Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate
    Khoshakhlagh, A.
    Jaeckel, F.
    Hains, C.
    Rodriguez, J. B.
    Dawson, L. R.
    Malloy, K.
    Krishna, S.
    APPLIED PHYSICS LETTERS, 2010, 97 (05)
  • [46] Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices
    Kaspi, R
    Moeller, C
    Ongstad, A
    Tilton, ML
    Gianardi, D
    Dente, G
    Gopaladasu, P
    APPLIED PHYSICS LETTERS, 2000, 76 (04) : 409 - 411
  • [47] Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices
    Alshahrani, Dhafer
    Kesaria, Manoj
    Jimenez, Juan J.
    Kwan, Dominic
    Srivastava, Vibha
    Delmas, Marie
    Morales, Francisco M.
    Liang, Baolai
    Huffaker, Diana
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (06) : 8624 - 8635
  • [48] Growth and characterization of InAs/GaSb type II superlattices for long-wavelength infrared detectors
    Mohseni, H
    Michel, E
    Razeghi, M
    Mitchel, W
    Brown, G
    PHOTODETECTORS: MATERIALS AND DEVICES III, 1998, 3287 : 30 - 37
  • [49] InAs/GaSb type-II superlattices for high performance mid-infrared detectors
    Haugan, HJ
    Brown, GJ
    Smulowicz, F
    Grazulis, L
    Mitchel, WC
    Elhamri, S
    Mitchell, WD
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 198 - 202
  • [50] InAs/GaSb type-II superlattices versus HgCdTe ternary alloys - future prospect
    Rogalski, A.
    ELECTRO-OPTICAL AND INFRARED SYSTEMS: TECHNOLOGY AND APPLICATIONS XIV, 2017, 10433
12345