Growth of GaN on γ-Al2O3/Si(001) composite substrates

被引：0
|
作者：
Liu, Zhe [1 ]
Wang, Junxi [1 ]
Li, Jinmin [1 ]
Liu, Hongxin [1 ]
Wang, Qiyuan [1 ]
Wang, Jun [1 ]
Zhang, Nanhong [1 ]
Xiao, Hongling [1 ]
Wang, Xiaoliang [1 ]
Zeng, Yiping [1 ]
机构：
[1] Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2005年 / 26卷 / 12期
关键词：
Semiconducting gallium compounds;
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页码：2378 / 2384
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