Growth of GaN on γ-Al2O3/Si(001) composite substrates

被引：0
|
作者：
Liu, Zhe [1 ]
Wang, Junxi [1 ]
Li, Jinmin [1 ]
Liu, Hongxin [1 ]
Wang, Qiyuan [1 ]
Wang, Jun [1 ]
Zhang, Nanhong [1 ]
Xiao, Hongling [1 ]
Wang, Xiaoliang [1 ]
Zeng, Yiping [1 ]
机构：
[1] Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2005年 / 26卷 / 12期
关键词：
Semiconducting gallium compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2378 / 2384
相关论文
共 50 条
  • [1] Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates
    Lianshan Wang
    Xianglin Liu
    Yude Zan
    Du Wang
    Jun Wang
    Dacheng Lu
    Zhanguo Wang
    [J]. Science in China Series E: Technological Sciences, 1998, 41 : 203 - 207
  • [2] Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates
    Wang, LS
    Liu, XG
    Zan, YD
    Wang, D
    Wang, J
    Lu, DC
    Wang, ZG
    [J]. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 1998, 41 (02): : 203 - 207
  • [3] Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates
    Wang, Lianshan
    Liu, Xianglin
    Zan, Yude
    Wang, Du
    Wang, Jun
    Lu, Dacheng
    Wang, Zhanguo
    [J]. Science China Series E Technological Sciences, 1998, 41 (02): : 203 - 207
  • [4] Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates
    汪连山
    刘祥林
    昝育德
    汪度
    王俊
    陆大成
    王占国
    [J]. Science China Technological Sciences, 1998, (02) : 203 - 207
  • [5] High quality LEO growth and characterization of GaN films on Al2O3 and Si substrates
    Razeghi, M
    Kung, P
    Walker, D
    Hamilton, M
    Diaz, J
    [J]. EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 14 - 20
  • [6] Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer
    Wang, LS
    Liu, XL
    Zan, YD
    Wang, J
    Wang, D
    Lu, DC
    Wang, ZG
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (01) : 109 - 111
  • [7] Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al2O3(001) buffer layer
    Akai, D
    Hirabayashi, K
    Yokawa, M
    Sawada, K
    Ishida, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) : 463 - 467
  • [8] 在复合衬底γ-Al2O3/Si(001)上生长GaN
    刘喆
    王军喜
    李晋闽
    刘宏新
    王启元
    王俊
    张南红
    肖红领
    王晓亮
    曾一平
    [J]. Journal of Semiconductors, 2005, (12) : 2378 - 2384
  • [9] The growth and characterization of GaN grown on a γ-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy
    Wang, LS
    Liu, XL
    Zan, YD
    Wang, D
    Lu, DC
    Wang, ZG
    [J]. BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 93 - 96
  • [10] Fabrication of Pb(Zr,Ti)O3 films on epitaxial γ-Al2O3(001)/Si(001) substrates
    Akai, D
    Sawada, K
    Ishida, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 259 (1-2) : 90 - 94
12345