SiC Super Junction Transistors deliver high temp performance

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作者：
Veereddy, Deepak
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来源：
Power Electronics Technology | 2011年 / 37卷 / 11期
关键词：
Display devices - Bipolar transistors - Temperature - High temperature operations;
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摘要：
GeneSiC's SiC-based 1200 V/220 mω Super Junction Transistors (SJTs) feature high temperature operation capability, ultra-fast switching transitions, extremely low losses, and a large short-circuit withstand time of 22 μs. Power electronics fabricated on the Silicon Carbide (SiC) platform can operate at higher temperatures, higher frequencies, and can deliver higher circuit efficiencies as compared to traditional Si-based technologies. The Gate-oxide free, normally-off, current driven, quasi-majority device, SJT is a super-high current gain SiC-based BJT that features a square reverse biased safe operating area (RBSOA), high temperature operation capability, low VDS(on) and faster switching capability than any other competitor SiC switch. GeneSiC's 1200 V/220 mω SiC SJTs are packaged in standard TO-220 and high temperature TO-257 packages. The SJTs display a positive temperature coefficient of VDS(on) that facilitates paralleling of multiple devices for high current configurations.
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