(Ca,Na)(Zn,Mn)2As2: A new spin and charge doping decoupled diluted ferromagnetic semiconductor

被引：0
|
作者：
20144500167065
机构：
[1] Zhao, K.
[2] Chen, B.J.
[3] Deng, Z.
[4] 1,Han, W.
[5] Zhao, G.Q.
[6] Zhu, J.L.
[7] Liu, Q.Q.
[8] Wang, X.C.
[9] Frandsen, B.
[10] Liu, L.
[11] Cheung, S.
[12] Ning, F.L.
[13] Munsie, T.J.S.
[14] Medina, T.
[15] Luke, G.M.
[16] Carlo, J.P.
[17] Munevar, J.
[18] Zhang, G.M.
[19] Uemura, Y.J.
[20] 1,Jin, C.Q.
来源：
Jin, C.Q. | 1600年 / American Institute of Physics Inc.卷 / 116期
关键词：
23;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] New oxide diluted magnetic semiconductor La0.75Ca0.25Cu0.75Mn0.25SO with independent spin and charge doping by first -principle study
    Chen, Haoze
    Li, Linxian
    Wang, Sheng
    Li, Yuke
    Chen, Jianye
    Zhang, Li
    31ST INTERNATIONAL SYMPOSIUM ON SUPERCONDUCTIVITY (ISS2018), 2019, 1293
  • [42] Local atomic and magnetic structure of dilute magnetic semiconductor (Ba, K)(Zn, Mn)2As2
    Frandsen, Benjamin A.
    Gong, Zizhou
    Terban, Maxwell W.
    Banerjee, Soham
    Chen, Bijuan
    Jin, Changqing
    Feygenson, Mikhail
    Uemura, Yasutomo J.
    Billinge, Simon J. L.
    PHYSICAL REVIEW B, 2016, 94 (09)
  • [43] Anomalous critical point behavior in dilute magnetic semiconductor (Ca,Na)(Zn,Mn)2Sb2
    Yu, Shuang
    Liu, Xinyu
    Zhao, Guoqiang
    Peng, Yi
    Wang, Xiancheng
    Zhao, Jianfa
    Li, Wenmin
    Deng, Zheng
    Furdyna, Jacek K.
    Uemura, Y. J.
    Jin, Changqing
    PHYSICAL REVIEW MATERIALS, 2020, 4 (02)
  • [44] Spin torque and charge resistance of ferromagnetic semiconductor 2π and π domain walls
    Golovatski, E. A.
    Flatte, M. E.
    PHYSICAL REVIEW B, 2011, 84 (11)
  • [45] Author Correction: Single Crystal Growth and Spin Polarization Measurements of Diluted Magnetic Semiconductor (BaK)(ZnMn)2As2
    G. Q. Zhao
    C. J. Lin
    Z. Deng
    G. X. Gu
    S. Yu
    X. C. Wang
    Z. Z. Gong
    Yasutomo J. Uemura
    Y. Q. Li
    C. Q. Jin
    Scientific Reports, 10
  • [46] New diluted magnetic semiconductor Zn1-xMnxAs2
    Laiho, R
    Lisunov, KG
    Lahderanta, E
    Zakhvalinskii, VS
    TERNARY AND MULTINARY COMPOUNDS, 1998, 152 : 815 - 818
  • [47] Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2
    Sun, F.
    Zhao, G. Q.
    Escanhoela, C. A., Jr.
    Chen, B. J.
    Kou, R. H.
    Wang, Y. G.
    Xiao, Y. M.
    Chow, P.
    Mao, H. K.
    Haskel, D.
    Yang, W. G.
    Jin, C. Q.
    PHYSICAL REVIEW B, 2017, 95 (09)
  • [48] Doping effects of indium and copper on ferromagnetism in N-type magnetic semiconductor Ba(Zn,Co)2As2
    Zhao, Xueqin
    Dong, Jinou
    Xie, Lingfeng
    Yang, Qiaolin
    Pan, Xun
    Tang, Haoyuan
    Xu, Zhicheng
    Zhi, Guoxiang
    Gu, Yilun
    Fu, Licheng
    Ning, Fanlong
    SCIENTIFIC REPORTS, 2025, 15 (01):
  • [49] Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2
    Sun, Fei
    Peng, Yi
    Zhao, Guoqiang
    Wang, Xiancheng
    Deng, Zheng
    Jin, Changqing
    JOURNAL OF SEMICONDUCTORS, 2024, 45 (04)
  • [50] Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2
    Fei Sun
    Yi Peng
    Guoqiang Zhao
    Xiancheng Wang
    Zheng Deng
    Changqing Jin
    Journal of Semiconductors, 2024, (04) : 46 - 52
12345