Preparation and Characterization of Zn2+-doped MgGa2O4∶Ni2+ NIR-Ⅱ Phosphors and Their Application in Imaging

被引：0

作者：

Zhang, Lin ^{[1
]}

Yang, Jian ^{[1
]}

Li, Shengnan ^{[1
]}

Wang, Shuai ^{[1
]}

Zhu, Hancheng ^{[1
]}

Yan, Duanting ^{[1
]}

Xu, Changshan ^{[1
]}

Liu, Yuxue ^{[1
]}

机构：

[1] School of Physics, Northeast Normal University, Changchun,130024, China

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 08期

关键词：

Herein; a series of ZnxMg0. 993-xGa2O4∶0. 7%Ni2+ （x=0-0. 5）（ZMGO∶Ni2+）phosphors with inverse spinel structure were successfully prepared through a hydrothermal method followed by a vacuum heat treatment; emitting within the 2nd near-infrared transmittance window（NIR-Ⅱ：1 000-1 700 nm）. The particle size of ZMGO∶Ni2+ phosphors exhibited a gradual increase with increasing Zn2+ doping content. Upon excitation by a 635 nm laser; ZMGO∶ Ni2+ phosphors exhibited a broad emission band centered at approximately 1 279 nm; which can be attributed to the characteristic emission of Ni2+. Their thermal activation energy is decreased from 244 meV to 224 meV after Zn2+ doping. A NIR-Ⅱ phosphor-converted light-emitting diode（NIR-Ⅱ pc-LED）was fabricated by employing ZMGO∶Ni2+ phosphors with the strongest luminescence intensity; in conjunction with a 620 nm red LED chip. Based on high penetration ability; minimal scattering property and auto-fluorescence-free background of NIR-Ⅱ light; night vision imaging with occlusion and tissue imaging were performed using the NIR-Ⅱ pc-LED; respectively. © 2024 Editorial Office of Chinese Optics. All rights reserved;

D O I：

10.37188/CJL.20240119

中图分类号：

学科分类号：

摘要：

引用

页码：1311 / 1324

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