Effect of carrier gas of Bi4Ti3O12 thin film prepared by metalorganic vapor deposition method

被引：0

作者：

Nakamura, Makoto ^{[1
]}

Higuchi, Tohru ^{[1
]}

Tsukamoto, Takeyo ^{[1
]}

机构：

[1] Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 9 B期

关键词：

Annealing - Argon - Ferroelectricity - Metallorganic chemical vapor deposition - Oxygen - Platinum - Polarization - Semiconducting bismuth compounds - Semiconducting silicon - Silica - Substrates - Titanium;

D O I：

10.1143/jjap.42.5969

中图分类号：

学科分类号：

摘要：

Undoped Bi4Ti3O12 (BIT) thin films on (111) Pt/Ti/SiO2/Si substrates were prepared by a metalorganic vapor deposition method using Bi(CH3)3 and Ti(i-OC3H7)4 sources. The ferroelectricity of BIT thin films was observed at a low deposition temperature of 500°C. The electrical and structural properties were found to depend on the total gas flow rate of Ar and O2 gases during deposition. The remanent polarization (Pr) and the coercive field (Ec) of highly (117)-oriented BIT thin films prepared at a total gas flow rate of 90 sccm were 2Pr = 28.8 μC/cm2 and 2Ec = 130.7 kV/cm, respectively. The Pr and Ec of highly c-axis-oriented BIT thin films prepared at a total gas flow rate of 180 sccm were 2Pr = 6.2 μC/cm2 and 2Ec = 107.6 kV/cm, respectively.

引用

页码：5969 / 5972

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