Characterization of tensile strained Si1-yCy alloy grown by photo- and plasma chemical vapor deposition at very low temperature

被引：0

作者：

Abe, K. ^{[1
]}

Yagi, S. ^{[1
]}

Okabayashi, T. ^{[1
]}

Yamada, A. ^{[1
]}

Konagai, M. ^{[1
]}

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 07期

关键词：

Annealing - Epitaxial growth - Lattice constants - Low temperature effects - Plasma enhanced chemical vapor deposition - Substrates - Thin films - X ray diffraction analysis;

D O I：

10.1143/jjap.40.4440

中图分类号：

学科分类号：

摘要：

Epitaxial growth of Si1-yCy films on Si(001) by photochemical vapor deposition (photo-CVD) and plasma-enhanced chemical vapor deposition (plasma-CVD) is reported. We obtained the epitaxial Si films by the addition of C2H2 or CH4 to SiH4 and H2 gases using both methods at a very low substrate temperature of 200°C. Hydrogen incorporation in the epitaxial films and lattice expansion by H atoms were observed. The H atoms in the film desorbed by thermal annealing in N2 atmosphere. The C local vibration mode in the Si network (607 cm-1) was detected in the films annealed at temperatures higher than 600°C. X-ray diffraction peak of the Si1-yCy layer shifted to a higher angle by the annealing. The X-ray reciprocal lattice space mapping indicated pseudomorphic growth of Si1-yCy alloys. Thus, the tensile strained Si1-yCy alloy with a high subst itutional C content of 2.7% was successfully obtained.

引用

页码：4440 / 4444

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