Toward utilizing scanning gate microscopy as a high-resolution probe of valley splitting in Si/SiGe heterostructures

被引：0
|
作者：
Cakar, Efe [1 ,2 ]
Ercan, H. Ekmel [3 ]
Fuchs, Gordian [4 ]
Denisov, Artem O. [5 ]
Anderson, Christopher R. [2 ,6 ]
Gyure, Mark F. [2 ,3 ]
Petta, Jason R. [1 ,2 ]
机构：
[1] Department of Physics and Astronomy, UCLA, Los Angeles,CA,90095, United States
[2] Center for Quantum Science and Engineering, UCLA, Los Angeles,CA,90095, United States
[3] Department of Electrical and Computer Engineering, UCLA, Los Angeles,CA,90095, United States
[4] Department of Electrical and Computer Engineering, Princeton University, Princeton,NJ,08544, United States
[5] Department of Physics, Princeton University, Princeton,NJ,08544, United States
[6] Department of Mathematics, UCLA, Los Angeles,CA,90095, United States
来源：
Applied Physics Letters | 2024年 / 125卷 / 14期
关键词：
Compendex;
D O I：
10.1063/5.0217704
中图分类号：
学科分类号：
摘要：
Poisson equation
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