Research on the turn-off characteristic of IGCT influenced by the stray inductance in high power inverters

被引:0
|
作者
State Key Laboratory of Control and Simulation of Power System and Generation Equipment, Tsinghua University, Beijing 100084, China [1 ]
机构
来源
Zhongguo Dianji Gongcheng Xuebao | 2007年 / 31卷 / 115-120期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:115 / 120
相关论文
共 50 条
  • [21] New driving method for self turn-off semiconductor of high power
    Mitsubishi Heavy Industries, Ltd., 16-5, Konan 2-chome, Minato-ku, Tokyo 108-8215, Japan
    IEEJ Trans. Fundam. Mater., 2008, 4 (283-288+17):
  • [22] SWITCHING CHARACTERISTICS OF HIGH POWER GATE TURN-OFF THYRISTORS.
    Fasce, F.
    Zambelli, M.
    1985, 1 : 67 - 1
  • [23] Modelling Turn-Off Losses in Power Diodes
    Schoenberger, John
    Feix, Gudrun
    2008 IEEE 11TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS, 2008, : 260 - 265
  • [24] CONSTANT TURN-OFF TIME CONTROL FOR VARIABLE FREQUENCY THYRISTOR INVERTERS
    MCMURRAY, W
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1977, 13 (05) : 418 - 422
  • [25] Influence of Stray Inductance in the Semiconductor Module of DC Circuit Breaker on Turn-off Characteristics of Parallel IGBTs and Optimization Design of Busbar Structure
    Liu X.
    Wang L.
    Liang G.
    Qiu P.
    Qi L.
    Dianwang Jishu/Power System Technology, 2021, 45 (01): : 389 - 398
  • [26] The Effects of the Stray Elements on the Failure of Parallel Connected IGBTs during Turn-Off
    Abbate, C.
    Busatto, G.
    Iannuzzo, F.
    EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9, 2009, : 3989 - 3997
  • [27] The Integrated Emitter Turn-Off Thyrister (IETO) - An Innovative Thyristor Based High Power Semiconductor Device Using MOS Assisted Turn-Off
    Bragard, Michael
    Conrad, Marcus
    De Doncker, Rik W.
    2010 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION, 2010, : 4551 - 4557
  • [28] Enhancing Turn-Off Performance in IGCT-Based High Power Applications-Part II: Hybrid Switch With IGBT Integration and Experimental Validation
    Chen, Lvyang
    Wang, Jiabin
    Zhang, Xiangyu
    Wang, Lin
    Chen, Zhengyu
    Zhao, Biao
    Wu, Jinpeng
    Yu, Zhanqing
    Qi, Lei
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (02) : 3168 - 3176
  • [29] Experimental Investigation on the Turn-Off Current Redistribution Characteristics of IGCT Based on an Isolated Anode Design
    Zhou, Wenpeng
    Shang, Zaixuan
    Liu, Jiapeng
    Chen, Zhengyu
    Wu, Jinpeng
    Zhao, Biao
    Yu, Zhanqing
    Wang, Fengying
    Li, Meng
    Ji, Weifeng
    Zeng, Rong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (08) : 4897 - 4905
  • [30] Evaluation of the turn-off transient controllability for high-power IGBT modules
    Tan, Kun
    Ji, Bing
    Wang, Jun
    Deng, Wenjuan
    Li, Daohui
    Wang, Zhiqiang
    Liu, Zheng
    Cao, Wenping
    IET POWER ELECTRONICS, 2022, 15 (07) : 631 - 643