The effect of stress on solid-phase epitaxial regrowth in As+-implanted two-dimensional amorphized Si

The effect of stress induced by a chemical-vapor-deposited (CVD) SiO2 film on the solid-phase epitaxial (SPE) regrowth in As+-implanted, two-dimensional amorphized Si has been studied. Trench structures were used to form the two-dimensional amorphous layer and to induce the stress in the Si substrate. As+ implantation at an energy of 80 keV with a dose of 3 × 1015/cm2 amorphized the silicon surface and produced a curved amorphous/crystalline (a/c) interface under the bottom corner of the trenches. At the trenches filled with the high-tensile-stress CVD SiO2 film, the regrowth of the amorphous Si layers was retarded and a notch remained in the a/c interface immediately under the bottom corner of the trench after annealing at 500°C for 4 h. The regrowth retardation and the remaining notch were explained by the effect of the stress induced by the CVD SiO2 film on the activation barrier of the SPE regrowth.