Self-assembled growth of nanoquantum dots on Si surface

Nanometer-sized silicon structures have attracted much attention because of their unique photoelectronic and transport properties associated with quantum effects. Self-assembled growth methods are of increasing interest as a formed technology of high quality nanoquantum dots. In particular, self-assembled growth of nanoquantum dots with controlled size and density is very important for electronic device applications. We focused on the self-assembled growth and formed mechanism on various Si surfaces, such as conventional surface, oxidized surface, stepped surface and absorbed surface, and future development are also discussed.