Comment on `Analysis of high-resolution X-ray diffraction in semiconductor strained layers' [J. Appl. Phys. 86, 782 (1999)]

被引：0

作者：

机构：

来源：

| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 87期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

下载

共 50 条

[31] Comment on band gap bowing and electron localization of Ga X In1-XN [J. Appl. Phys. 100, 093717 (2006)]
Bagayoko, D.
Franklin, L.
Zhao, G.L.
Jin, H.
Journal of Applied Physics, 2008, 103 (09):
[32] Response to "Comment on 'Dynamic analysis of the response of lateral piezoresistance gauges in shocked ceramics' and on 'Determination of lateral stresses in shocked solids: Simplified analysis of piezoresistance gauge data' " [J. Appl. Phys. 86, 3484 (1999)]
Feng, R
Gupta, YM
Wong, MKW
JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) : 3487 - 3489
[33] Characterization of strained quantum wells by high-resolution x-ray diffraction
Finkelstein, Y
Zolotoyabko, E
Blumina, M
Fekete, D
JOURNAL OF APPLIED PHYSICS, 1996, 79 (04) : 1869 - 1875
[34] High-resolution X-ray diffraction analysis and reflectivity of epitaxial thin layers
Baulès, P
Casanove, MJ
Roucau, C
Ousset, JC
Bobo, JF
Snoeck, E
Magnoux, D
Gatel, C
JOURNAL DE PHYSIQUE IV, 2002, 12 (PR6): : 247 - 253
[35] Comment on "An analysis technique for extraction of thin film stresses from x-ray data" [Appl. Phys. Lett. 71, 2949 (1997)]
Murray, CE
Noyan, IC
APPLIED PHYSICS LETTERS, 1998, 73 (21) : 3165 - 3166
[36] Comment on "A model for internal photoemission at high-k oxide/silicon energy barriers" [J. Appl. Phys. 112, 064115 (2012)]
Afanas'ev, V. V.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (16)
[37] Characterization of semiconductor strained layers grown on (110)-type substrates by high-resolution X-ray diffractometry
Fatemi, M
JOURNAL OF CRYSTAL GROWTH, 1996, 169 (02) : 261 - 268
[38] Response to Comment on 'Comparative analysis of glass-formation in binary, ternary, and multicomponent alloys' [J. Appl. Phys. 114, 166101 (2013)]
1600, American Institute of Physics, 2 Huntington Quadrangle, Suite N101, Melville, NY 11747-4502, United States (114):
[39] Response to "Comment on 'Comparative analysis of glass-formation in binary, ternary, and multicomponent alloys'" [J. Appl. Phys. 114, 166101 (2013)]
Louzguine-Luzgin, Dmitri V.
Miracle, Daniel B.
Louzguina-Luzgina, Larissa
Inoue, Akihisa
JOURNAL OF APPLIED PHYSICS, 2013, 114 (16)
[40] Comment on "Bulk acoustic wave analysis of crystalline plane oriented ZnO films" [J. Appl. Phys. 102(8), 084908 (2007)]
Ballato, Arthur
JOURNAL OF APPLIED PHYSICS, 2015, 117 (24)

← 1 2 3 4 5 →