Comment on `Analysis of high-resolution X-ray diffraction in semiconductor strained layers' [J. Appl. Phys. 86, 782 (1999)]

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| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 87期

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[1] Comment on "Analysis of high-resolution x-ray diffraction in semiconductor strained layers" [J. Appl. Phys. 86, 782 (1999)]
Fatemi, M
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 8212 - 8214
[2] Response to "Comment on 'Analysis of high-resolution x-ray diffraction in semiconductor strained layers' " [J. Appl. Phys. 87, 8212 (2000)]
Dunstan, DJ
Kimber, AC
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 8215 - 8215
[3] Analysis of high-resolution x-ray diffraction in semiconductor strained layers
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[J]. 1600, American Inst of Physics, Woodbury, NY, USA (87):
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