CMOS compatible electrode materials selection in oxide-based memory devices

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[1] Zhuo, V.Y.-Q.
[2] Li, M.
[3] Guo, Y.
[4] Wang, W.
[5] Yang, Y.
[6] Jiang, Y.
[7] Robertson, J.
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Zhuo, V.Y.-Q. (victor-zhuo@dsi.a-star.edu.sg) | 1600年 / American Institute of Physics Inc.卷 / 120期
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