New aqueous clean for aluminum interconnects: Part II. Applications

被引：0

作者：

Ravikumar, R. ^{[1
]}

Rath, D.L. ^{[2
]}

Delehanty, D.J. ^{[3
]}

Filippi, R.G. ^{[3
]}

Kiewra, E.W. ^{[3
]}

Stojakovic, G. ^{[1
]}

McCullough, K.J. ^{[3
]}

Miura, D.D. ^{[3
]}

Gambino, J. ^{[3
]}

Schnabel, F. ^{[1
]}

Rhoads, B.N. ^{[3
]}

机构：

[1] DRAM Development Alliance, Infineon Technologies Corp., 2070 Rte. 52, Hopewell Junction, NY 12533, United States

[2] T.J. Watson Research Center, IBM Research Division, Yorktown Heights, NY 10598, United States

[3] DRAM Development Alliance, IBM Microelectronics Division, 2070 Rte. 52, Hopewell Junction, NY 12533, United States

来源：

Solid State Phenomena | 2000年 / 76-77卷

关键词：

Aluminum - Dynamic random access storage - Electromigration - Integrated circuit manufacture - Reactive ion etching - Reliability - Scanning electron microscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The integration of a new aqueous clean, dSP+, has been demonstrated for aluminum interconnect technology in advanced DRAM products. The dSP+ chemistry was targeted for two back-end-of-line (BEOL) applications: post Al RIE clean and via clean. The results in this paper are discussed using SEM, reliability, and electrical parametric data.

引用

页码：51 / 54

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