New aqueous clean for aluminum interconnects: Part II. Applications

被引：0
|
作者：
Ravikumar, R. [1 ]
Rath, D.L. [2 ]
Delehanty, D.J. [3 ]
Filippi, R.G. [3 ]
Kiewra, E.W. [3 ]
Stojakovic, G. [1 ]
McCullough, K.J. [3 ]
Miura, D.D. [3 ]
Gambino, J. [3 ]
Schnabel, F. [1 ]
Rhoads, B.N. [3 ]
机构：
[1] DRAM Development Alliance, Infineon Technologies Corp., 2070 Rte. 52, Hopewell Junction, NY 12533, United States
[2] T.J. Watson Research Center, IBM Research Division, Yorktown Heights, NY 10598, United States
[3] DRAM Development Alliance, IBM Microelectronics Division, 2070 Rte. 52, Hopewell Junction, NY 12533, United States
来源：
Solid State Phenomena | 2000年 / 76-77卷
关键词：
Aluminum - Dynamic random access storage - Electromigration - Integrated circuit manufacture - Reactive ion etching - Reliability - Scanning electron microscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The integration of a new aqueous clean, dSP+, has been demonstrated for aluminum interconnect technology in advanced DRAM products. The dSP+ chemistry was targeted for two back-end-of-line (BEOL) applications: post Al RIE clean and via clean. The results in this paper are discussed using SEM, reliability, and electrical parametric data.
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页码：51 / 54
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