Performance Limiting Factors and Efficiency Improvement Methods of Graphene/n-Si Schottky Junction Solar Cell

被引：0
|
作者：
Shang Y. [1 ,2 ]
Chen X. [1 ,2 ]
Li S. [3 ]
Ma W. [3 ]
Wang Y. [1 ,2 ]
Xiang F. [1 ,2 ]
机构：
[1] Faculty of Materials Science and Engineering, Yunnan University, Kunming
[2] Faculty of Physics and Astronomy, Yunnan University, Kunming
[3] National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming
来源：
Chen, Xiuhua (chenxh@ynu.edu.cn) | 1600年 / Cailiao Daobaoshe/ Materials Review卷 / 31期
关键词：
Graphene; Schottky junction; Silicon; Solar cells;
D O I：
10.11896/j.issn.1005-023X.2017.03.020
中图分类号：
学科分类号：
摘要：
Graphene is a new type zero band gap and semi-metal material. Due to its high transmittance, good electrical conductivity, high stability, mechanical properties and other excellent performance, it could replace the traditional ITO material to prepare the new generation of graphene/n-Si Schottky junction solar cells. In this review the research progress of graphene/n-Si Schottky junction solar cells are described in detail, the reasons for affecting the performance of graphene/n-Si Schottky junction solar cells and the related optimization methods are mainly summarized and analyzed, in order to provide references for the further research and application of graphene/n-Si Schottky junction solar cells in the future. © 2017, Materials Review Magazine. All right reserved.
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页码：123 / 129
页数：6
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