Preparation of ITO thin films by RF magnetron sputtering at low temperature

被引：0
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作者：
Wang, Xiu-Juan [1 ]
Si, Jia-Le [1 ]
Yang, De-Lin [1 ]
Gu, Jin-Hua [1 ]
Lu, Jing-Xiao [1 ]
机构：
[1] Key Laboratory of Material Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2015年 / 44卷 / 06期
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摘要：
ITO thin films were prepared using radio frequency (RF) magnetron sputtering. The effect of deposition parameters on the structure and photoelectric properties of ITO films were investigated. The results show that the optimum process parameters for ITO film deposition are O2/Ar flow ratio of 0.1/25, sputtering power of 210 W, sputtering pressure of 0.2 Pa, substrate temperature of 100 and substrate-target distance of 2.0 cm, respectively. The average transmittance of the prepared ITO thin films in the visible region is 89.4% and the resistivity is 7.3×10-4 Ω·cm. After deposition, the thin film was annealed in Ar for 60 min at 200, resistivity of thin films decreases to 3.8×10-4Ω·cm. ©, 2015, Rengong Jingti Xuebao/Journal of Synthetic Crystals. All right reserved.
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页码：1516 / 1522
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