The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

被引:0
|
作者
ESAT Department, KULeuven, Leuven, Belgium [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
不详 [5 ]
机构
[1] [1,Martens, K.
[2] 2,Radu, I.P.
[3] Mertens, S.
[4] Shi, X.
[5] Nyns, L.
[6] Cosemans, S.
[7] Favia, P.
[8] Bender, H.
[9] Conard, T.
[10] Schaekers, M.
[11] 2,De Gendt, S.
[12] 2,Afanas'Ev, V.
[13] Kittl, J.A.
[14] 2,Heyns, M.
[15] Jurczak, M.
来源
| 1600年 / American Institute of Physics Inc.卷 / 112期
关键词
Metal insulator transition;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Terahertz conductivity of the metal-insulator transition in a nanogranular VO2 film
    Cocker, T. L.
    Titova, L. V.
    Fourmaux, S.
    Bandulet, H-C.
    Brassard, D.
    Kieffer, J-C.
    El Khakani, M. A.
    Hegmann, F. A.
    APPLIED PHYSICS LETTERS, 2010, 97 (22)
  • [42] Competitive coexistence of ferromagnetism and metal-insulator transition of VO2 nanoparticles
    Hatano, Tsuyoshi
    Fukawa, Akihiro
    Yamamoto, Hiroki
    Akiba, Keiichirou
    Demura, Satoshi
    Takase, Kouichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (04)
  • [43] Ultrafast Metal-Insulator Transition in VO2 Driven by Electron Injection
    Appavoo, Kannatassen
    Brady, Nathaniel F.
    Seo, Minah
    Nag, Joyeeta
    Prasankumar, Rohit P.
    Hilton, David J.
    Haglund, Richard F., Jr.
    2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [44] Phase coexistence in the metal-insulator transition of a VO2 thin film
    Chang, YJ
    Koo, CH
    Yang, JS
    Kim, YS
    Kim, DH
    Lee, JS
    Noh, TW
    Kim, HT
    Chae, BG
    THIN SOLID FILMS, 2005, 486 (1-2) : 46 - 49
  • [45] Decoupling between metal-insulator transition and structural phase transition in an interface-engineered VO2
    Ji, Yanda
    Cheng, Lei
    Li, Ning
    Yuan, Ye
    Liang, Weizheng
    Yang, Hao
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2021, 33 (10)
  • [46] Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO2 Gate Insulator
    Yajima, Takeaki
    Nishimura, Tomonori
    Tanaka, Takahisa
    Uchida, Ken
    Toriumi, Akira
    ADVANCED ELECTRONIC MATERIALS, 2020, 6 (05)
  • [47] METAL-INSULATOR TRANSITION
    MOTT, NF
    REVIEWS OF MODERN PHYSICS, 1968, 40 (04) : 677 - &
  • [48] Unusual magnetic transition near metal-insulator transition and paramagnetic anomaly in VO2
    Yin, Chongyang
    Zhang, Run
    Qian, Guoyu
    Fu, Qingshan
    Li, Canglong
    Wang, Mingchao
    Zhu, Changming
    Wang, Liguang
    Yuan, Songliu
    Zhao, Xiujian
    Tao, Haizheng
    APPLIED PHYSICS LETTERS, 2017, 110 (17)
  • [49] Doping a bad metal: Origin of suppression of the metal-insulator transition in nonstoichiometric VO2
    Ganesh, P.
    Lechermann, Frank
    Kylanpaa, Ilkka
    Krogel, Jaron T.
    Kent, Paul R. C.
    Heinonen, Olle
    PHYSICAL REVIEW B, 2020, 101 (15)
  • [50] Investigation of the thermal conductivities across metal-insulator transition in polycrystalline VO2
    Chen JiKun
    Liu XinLing
    Yuan Xun
    Zhang YuLiang
    Gao YanFeng
    Zhou YanFei
    Liu RuiHeng
    Chen LiDong
    Chen NuoFu
    CHINESE SCIENCE BULLETIN, 2012, 57 (26): : 3393 - 3396