Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

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20150900587254
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[1] [1,Li, L.B.
[2] Chen, Z.M.
[3] Zang, Y.
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Li, L.B. (xpu_lilianbi@163.com) | 1600年 / American Institute of Physics Inc.卷 / 117期
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The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850-∼-1050-°C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode; which releases most of the lattice-mismatch strain; and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900-°C; and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1-11)[1-1-2]Si//(0001)[-2110]6H-SiC. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000-°C; the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]Si//(0001)[2-1-10]6H-SiC. Along Si[110] orientation; the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001; the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487-×-1014-cm-2 and 1.217-×-1014-cm-2; respectively; which is much smaller than the theoretical calculation results. © 2015 AIP Publishing LLC;
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